features ? low on-state resistance ? fast switching ? low gate charge & low c rss ? fully characterized avalanche voltage and current ? specially desigened for ac adapter, battery charger and smps ? in compliance with eu rohs 2002/95/ec directives mechanical information ? case: to-252 / to-251 molded plastic ? terminals : solderable per mil-std-750,method 2026 marking & ordering information type marking package packing HY4N65D 4n65d to-252 2500pcs/reel hy4n65m 4n65m to-251 80pcs/tube absolute maximum ratings (t c =25c unless otherwise specified ) units v v t c =25 a a t c =25 w mj thermal characteristics units /w /w company reserves the right to improve product design HY4N65D hy4n65m drain-source voltage v ds 650 650v / 4a n-channel enhancement mode mosfet parameter symbol 650v, r ds(on) =2.8 w @v gs =10v, i d =2a gate-source voltage v gs i d 4 4 continuous drain current + 30 pulsed drain current 1) i dm 16 16 p d 56.8 0.46 48 0.39 maximum power dissipation derating factor avalanche energy with single pulse i as =4a, v dd =150v, l=22.5mh e as operating junction and storage temperature range t j, t stg -55 to +150 180 parameter symbol HY4N65D hy4n65m junction-to-case thermal resistance r q jc note : 1. maximum dc current limited by the package junction-to-case thermal resistance r q ja HY4N65D / hy4n65m 2.2 2.6 50 110 fig. 1 C forward current derating curve ambient temperature ( ) 25 50 75 100 125 150 175 single phase half wave 60hz fig. 2 C maximum non - 1 2 5 10 single 1 4 10 20 100 t 0 0.2 0.4 0.6 0.0 rev 1.0, 20 - sept - 2012 page.1 drain 1 source 2 gate 2 d 3 1 g 3 s 2 d 1 g 3 s to - 252 to - 251
symbol min. typ. max. units bv dss 650 - - v v gs(th) 2.0 - 4.0 v r ds(on) - 2.5 2.8 w i dss - - 10 ua i gss - - + 100 na qg - 16.2 20 qgs - 3.2 - qgd - 5.6 - t d(on) - 16.8 22 t r - 36 46 t d(off) - 21.8 32 t f - 19.2 28 c iss - 480 - c oss - 65 - c rss - 1.3 - i s - - 4.0 a i sm - - 16 a v sd - - 1.4 v t rr - 210 - ns q rr - 0.8 - uc note : pulse test : pulse width Q 300us, duty cycle Q 2% source-drain diode v gs =0v i s =4a di/dt=100a/us - - i s =4a v gs =0v max. pulsed source current diode forward voltage reverse recovery time turn-off delay time turn-off fall time input capacitance output capacitance reverse transfer capacitance reverse recovery charge max. diode forwad voltage pf v ds =25v v gs =0v f=1.0m hz static v gs =0v i d =250ua v ds =v gs i d =250ua v gs =10v i d =2a v ds =650v v gs =0v v gs = + 30v v ds =0v zero gate voltage drain current gate body leakage current gate-drain charge dynamic v ds =520v i d =4a v gs =10v nc turn-on delay time turn-on rise time ns v dd =325v i d =4a v gs =10v r g =25 w HY4N65D / hy4n65m electrical characteristics ( t c =25 test condition paramter drain-source breakdown voltage gate threshold voltage drain-source on-state resistance total gate charge gate-source charge page.2 rev 1.0, 20 - sept - 2012
HY4N65D / hy4n65m typical characteristics curves ( t c =25 , unless otherwise noted) 0 1 2 3 4 5 6 7 0 10 20 30 40 50 i d - drain - to - source current (a) v ds - drain - to - source voltage (v) 6.0v v gs = 20v~ 8.0v 5.0v 7.0v 0 2 4 6 8 0 2 4 6 8 r ds(on) - on resistance( w ) i d - drain current (a) v gs = 20v v gs =10v 0 200 400 600 800 1000 0 5 10 15 20 25 30 c - capacitance (pf) v ds - drain - to - source voltage (v) ciss f = 1mhz v gs = 0v crss coss 0 2 4 6 8 10 12 4 5 6 7 8 9 10 r ds(on) - on resistance( w ) v gs - gate - to - source voltage (v) i d =2.0a 0.1 1 10 1 2 3 4 5 6 7 8 9 i d - drain source current (a) v gs - gate - to - source voltage (v) v ds =50v t j = 125 o c 25 o c - 55 o c fig.1 output characteristric 0 2 4 6 8 10 12 0 2 4 6 8 10 12 14 16 18 v gs - gate - to - source voltage (v) q g - gate charge (nc) i d =4.0a v ds =520v v ds =325v v ds =130v fig.2 transfer characteristric fig.3 on - resistance vs drain current fig.4 on - resistance vs gate to source voltage fig.5 capacitance characteristic fig.6 gate charge characteristic page.3 rev 1.0, 20 - sept - 2012
HY4N65D / hy4n65m typical characteristics curves ( t c =25 , unless otherwise noted) 0.8 0.9 1 1.1 1.2 - 50 - 25 0 25 50 75 100 125 150 bv dss - breakdown voltage (normalized) t j - junction temperature ( o c) i d = 250 m a 0.01 0.1 1 10 100 0.2 0.4 0.6 0.8 1 1.2 1.4 i s - source current (a) v sd - source - to - drain voltage (v) t j = 125 o c 25 o c v gs = 0v - 55 o c 0 0.5 1 1.5 2 2.5 - 50 - 25 0 25 50 75 100 125 150 r ds(on) - on - resistance (normalized) t j - junction temperature ( o c) v gs =10 v i d =2.0a fig.7 on - resistance vs junction temperature fig.8 breakdown voltage vs junction temperature fig.9 body diode forward voltage characteristic page.4 rev 1.0, 20 - sept - 2012
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